PART |
Description |
Maker |
PDSP16116MC PDSP16116A |
0.5-7.0V; 18mA; 16 x 16bit complex multiplier. For fast fourier transform, digital filtering, radar and sonar processing
|
Mitel Semiconductor
|
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor, Inc.
|
HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
A43L2616V-6PH A43L2616V-7PH |
Cycle time:6ns; 166MHz CL=3 access time:5.0ns 1M x 16bit x 4banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:5.4ns 1M x 16bit x 4banks synchronous DRAM
|
AMIC Technology
|
M12L16161A-5TG2Q M12L16161A-7TG2Q M12L16161A2Q |
512K x 16Bit x 2Banks
|
Elite Semiconductor Memory Technology Inc.
|
KM416C256DLJ-7 KM416V256DLJ-5 KM416C256DLJ-5 KM416 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability
|
Samsung Electronic
|
HY57V561620 HY57V561620LT-H HY57V561620LT-HP HY57V |
4Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
K4S641632C-TC_L10 K4S641632C-TC_L1H K4S641632C-TC_ |
1M x 16Bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
TTS3816B4E |
2M x 16Bit x 4 Banks synchronous DRAM
|
TwinMOS
|
IC43R16800 |
2M x 16bit x 4 Banks DDR SDRAM
|
Integrated Circuit Solution
|
AKD5355 AK5355VN AK535505 AK5355VT |
Low Power 16bit ΔΣ ADC
|
Asahi Kasei Microsystems Asahi Kasei Microsystem...
|
M12L32162A0712 M12L32162A-7BVG |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
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